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%ما هو (من)٪ 1 - تعريف

FORM OF COMPUTER DATA STORAGE

R.A.M.; Shadow Random Access Memory; Memory wall; Shadow ram; Shadow RAM; Shadow random access memory; Random-Access Memory; RAM chip; Random Access Memory; RAM (memory); Sigmaquad; Random access memory; Single sided RAM; Single-sided RAM; Single sided random access memory; Single-sided random access memory; RAM memory; Computer RAM memory; RAM; Memory bottleneck; History of random-access memory; RAM IC; RAM stick

random-access memory

<storage> (RAM) (Previously "direct-access memory"). A data storage device for which the order of access to different locations does not affect the speed of access. This is in contrast to, say, a magnetic disk, magnetic tape or a mercury delay line where it is very much quicker to access data sequentially because accessing a non-sequential location requires physical movement of the storage medium rather than just electronic switching. In the 1970s magnetic core memory was used and some old-timers still call RAM "core". The most common form of RAM in use today is semiconductor integrated circuits, which can be either static random-access memory (SRAM) or {dynamic random-access memory} (DRAM). The term "RAM" has gained the additional meaning of read-write. Most kinds of semiconductor read-only memory (ROM) are actually "random access" in the above sense but are never referred to as RAM. Furthermore, memory referred to as RAM can usually be read and written equally quickly (approximately), in contrast to the various kinds of programmable read-only memory. Finally, RAM is usually volatile though non-volatile random-access memory is also used. Interestingly, some DRAM devices are not truly random access because various kinds of "page mode" or "column mode" mean that sequential access is faster than random access. The humorous expansion "Rarely Adequate Memory" refers to the fact that programs and data always seem to expand to fill the memory available. (2007-10-12)

shadow ram

<operating system> A memory area in PC-AT compatibles used to store frequently accessed ROM code to speed up operation. (1995-01-16)

static random-access memory

SEMICONDUCTOR MEMORY THAT USES FLIP-FLOPS TO STORE EACH BIT

Static RAM; S-RAM; Static Random Access Memory; SRAM latency; RSNM; Read static noise margin; Static random access memory; Static storage; ESRAM; 6T SRAM; 6T SRAM cell; 6T RAM cell

<storage> (SRAM) Random-access memory in which each bit of storage is a bistable flip-flop, commonly consisting of cross-coupled inverters. It is called "static" because it will retain a value as long as power is supplied, unlike dynamic random-access memory (DRAM) which must be regularly refreshed. It is however, still volatile, i.e. it will lose its contents when the power is switched off, in contrast to ROM. SRAM is usually faster than DRAM but since each bit requires several transistors (about six) you can get less bits of SRAM in the same area. It usually costs more per bit than DRAM and so is used for the most speed-critical parts of a computer (e.g. cache memory) or other circuit. (1995-04-22)

ويكيبيديا

Random-access memory

Random-access memory (RAM; ) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.

RAM contains multiplexing and demultiplexing circuitry, to connect the data lines to the addressed storage for reading or writing the entry. Usually more than one bit of storage is accessed by the same address, and RAM devices often have multiple data lines and are said to be "8-bit" or "16-bit", etc. devices.

In today's technology, random-access memory takes the form of integrated circuit (IC) chips with MOS (metal–oxide–semiconductor) memory cells. RAM is normally associated with volatile types of memory where stored information is lost if power is removed. The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM).

Non-volatile RAM has also been developed and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of limitations on them. These include most types of ROM and a type of flash memory called NOR-Flash.

Use of semiconductor RAM dated back to 1965, when IBM introduced the monolithic (single-chip) 16-bit SP95 SRAM chip for their System/360 Model 95 computer, and Toshiba used discrete DRAM memory cells for its 180-bit Toscal BC-1411 electronic calculator, both based on bipolar transistors. While it offered higher speeds than magnetic-core memory, bipolar DRAM could not compete with the lower price of the then-dominant magnetic-core memory.

MOS memory, based on MOS transistors, was developed in the late 1960s, and was the basis for all early commercial semiconductor memory. The first commercial DRAM IC chip, the 1K Intel 1103, was introduced in October 1970.

Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992.

https://en.wikipedia.org/wiki/RAM

أمثلة من مجموعة نصية لـ٪ 1

1. Price fixing in the dynamic random access memory market led to higher prices of some personal computers.

2. International Trade Commission (USITC) in the countervailing duty investigation on dynamic random access memory semiconductors (DRAMs) from Korea.

3. Static and dynamic random access memory chips, used in PCs and elsewhere, are fast but lose data when the power is switched off.

4. Texas Instruments Inc. and other companies are working with Colorado–based Ramtron International Corp. to develop higher–capacity chips using FRAM, or ferroelectric random–access memory.

5. Mitsubishi Electric declined 3.' per cent to Y'10 after saying the US Justice department was looking at its dynamic random access memory operations.